Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90789
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dc.contributor.authorDong, Guien
dc.contributor.authorChen, Tupeien
dc.contributor.authorLiu, Yangen
dc.contributor.authorTse, Man Siuen
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.date.accessioned2010-09-07T01:38:07Zen
dc.date.accessioned2019-12-06T17:54:04Z-
dc.date.available2010-09-07T01:38:07Zen
dc.date.available2019-12-06T17:54:04Z-
dc.date.copyright2004en
dc.date.issued2004en
dc.identifier.citationDong, G., Chen, T. P., Liu, Y., Tse, M. S., & Fung, S. H. Y. (2004). Profile of optical constants of SiO2 thin films containing Si nanocrystals. Journal of Applied Physics, 95(12), 8481-8483.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/90789-
dc.identifier.urihttp://hdl.handle.net/10220/6412en
dc.description.abstractFor optoelectronic and photonic applications of Si nanocrystals (nc-Si) embedded in a SiO2 matrix, the information of the depth profiles of the optical constants for the thin film system is necessary. In this work, an approach of the depth profiling for the thin film synthesized with ion implantation is developed. In this approach, the nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement is modeled with the approximation of many sublayers, and for a given wavelength the optical constants of each sublayer are formulated with the nc-Si volume fraction in the sublayer and the nc-Si optical constants as variables based on the effective medium approximation. After the above procedures the nc-Si optical constants are obtained from the spectral ellipsometric fittings. Finally the optical constants of each sublayer are calculated, and thus the depth profiles of the optical constants for the SiO2 thin film containing the nc-Si are obtained.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rightsJournal of Applied Physics © copyright 2004 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v95/i12/p8481_s1?isAuthorized=noen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleProfile of optical constants of SiO2 thin films containing Si nanocrystalsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Microelectronicsen
dc.identifier.doihttp://dx.doi.org/10.1063/1.1739282en
dc.description.versionPublished versionen
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