Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90792
Title: Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix
Authors: Ding, Liang
Chen, Tupei
Liu, Yang
Ng, Chi Yung
Liu, Yu Chan
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2005
Source: Ding, L., Chen, T., Liu, Y., Ng, C. Y., Liu, Y. C., & Fung, S. H. Y. (2005). Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. Applied Physics Letters, 87, 1-4.
Series/Report no.: Applied physics letters
Abstract: The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.
URI: https://hdl.handle.net/10356/90792
http://hdl.handle.net/10220/6398
ISSN: 0003-6951
DOI: 10.1063/1.2051807
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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