Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90792
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dc.contributor.authorDing, Liangen
dc.contributor.authorChen, Tupeien
dc.contributor.authorLiu, Yangen
dc.contributor.authorNg, Chi Yungen
dc.contributor.authorLiu, Yu Chanen
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.date.accessioned2010-09-03T07:47:53Zen
dc.date.accessioned2019-12-06T17:54:07Z-
dc.date.available2010-09-03T07:47:53Zen
dc.date.available2019-12-06T17:54:07Z-
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationDing, L., Chen, T., Liu, Y., Ng, C. Y., Liu, Y. C., & Fung, S. H. Y. (2005). Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix. Applied Physics Letters, 87, 1-4.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/90792-
dc.description.abstractThe thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.en
dc.format.extent4 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=noen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleThermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrixen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR SIMTechen
dc.identifier.doi10.1063/1.2051807en
dc.description.versionPublished versionen
item.grantfulltextopen-
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