Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90823
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dc.contributor.authorMei, Tingen
dc.date.accessioned2010-09-07T04:17:34Zen
dc.date.accessioned2019-12-06T17:54:41Z-
dc.date.available2010-09-07T04:17:34Zen
dc.date.available2019-12-06T17:54:41Z-
dc.date.copyright2007en
dc.date.issued2007en
dc.identifier.citationMei, T. (2007). Fourier transform-based k∙p method of semiconductor superlattice electronic structure. Journal of Applied Physics, 102, 1-5.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/90823-
dc.description.abstractWith the periodic spatial domain Hamiltonian being expressed as a Fourier series, a simple and neat Hamiltonian in a Fourier domain is formulated. The Fourier transform-based k⋅p approach is developed to calculate electronic structures of semiconductor heterostructures. Calculation of electronic structures is investigated with several quantum well examples and comparison is made between this approach and the finite difference approach. The formulation of the Fourier domain Hamiltonian for quantum dots is presented as well.en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rightsJournal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v102/i5/p053708_s1?isAuthorized=noen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen
dc.titleFourier transform-based k∙p method of semiconductor superlattice electronic structureen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.2776158en
dc.description.versionPublished versionen
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Appears in Collections:EEE Journal Articles
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