Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90823
Title: Fourier transform-based k∙p method of semiconductor superlattice electronic structure
Authors: Mei, Ting
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2007
Source: Mei, T. (2007). Fourier transform-based k∙p method of semiconductor superlattice electronic structure. Journal of Applied Physics, 102, 1-5.
Series/Report no.: Journal of applied physics
Abstract: With the periodic spatial domain Hamiltonian being expressed as a Fourier series, a simple and neat Hamiltonian in a Fourier domain is formulated. The Fourier transform-based k⋅p approach is developed to calculate electronic structures of semiconductor heterostructures. Calculation of electronic structures is investigated with several quantum well examples and comparison is made between this approach and the finite difference approach. The formulation of the Fourier domain Hamiltonian for quantum dots is presented as well.
URI: https://hdl.handle.net/10356/90823
http://hdl.handle.net/10220/6416
ISSN: 0021-8979
DOI: 10.1063/1.2776158
Rights: Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v102/i5/p053708_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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