Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90934
Title: Fabrication of periodic square arrays by angle-resolved nanosphere lithography
Authors: Lee, Kwang Hong
Chen, Qiu Ling
Yip, Chan Hoe
Yan, Qingfeng
Wong, Chee Cheong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2009
Source: Lee, K. H., Chen, Q. L., Yip, C. H., Yan, Q., & Wong, C. C. (2009). Fabrication of Periodic Square Arrays by Angle-Resolved Nanosphere Lithography. Microelectronic Engineering, 87(10), 1941-1944.
Series/Report no.: Microelectronics engineering
Abstract: We investigate the fabrication of periodic square arrays of solid gold islands by angle-resolved nanosphere lithography (ARNSL) in conjunction with thermal evaporation and etching. By varying θ (the tilt angle between the direction of gold deposition beam and the substrate surface normal) and (the substrate rotation angle about the beam axis), adjacent islands on a deposited hexagonal gold array will have a constant and periodic difference in height. Upon etching, this height bias will result in the shorter structures being removed to produce an array with a different symmetry from the original hexagonal symmetry of the parent mask. By depositing at three directions of = 0°, 120° and −120° with a constant θ = 20°, experimental results show that deposited two-dimensional gold periodic arrays will have a measurable difference in height between adjacent islands. Etching of the resulting patterns produced periodic near-square arrays with triangular nanostructures. Thus the combination of ARNSL and etching can allow selective periodic nanostructures to be removed, increasing the diversity of array symmetries available through nanosphere lithography.
URI: https://hdl.handle.net/10356/90934
http://hdl.handle.net/10220/6813
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.11.169
Rights: © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Engineering, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1016/j.mee.2009.11.169].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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