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|Title:||High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect||Authors:||Guo, L. H.
Zhang, Yue Ping
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2006||Source:||Zhang, Y. P., Guo, L. H., & Sun, M. (2006). High transmission gain inverted-F Antenna on low-resistivity Si for wireless interconnect. IEEE Electron Device Letters, 27(5), 374-376.||Series/Report no.:||IEEE electron device letters||Abstract:||Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 Ω · cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of −46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 Ω · cm silicon wafer of 750-μm thickness.||URI:||https://hdl.handle.net/10356/91050
|ISSN:||0741-3106||DOI:||10.1109/LED.2006.872351||Rights:||IEEE Electron Device Letters © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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