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dc.contributor.authorDing, Liangen
dc.contributor.authorChen, Tupeien
dc.contributor.authorWong, Jen Iten
dc.contributor.authorYang, Mingen
dc.contributor.authorLiu, Yangen
dc.contributor.authorNg, Chi Yungen
dc.contributor.authorLiu, Yu Chanen
dc.contributor.authorTung, Chih Hangen
dc.contributor.authorTrigg, Alastair Daviden
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.identifier.citationDing, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., et al. (2006). Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films. Applied Physics Letters, 89, 1-3.en
dc.description.abstractA densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.en
dc.format.extent3 p.en
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleDielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin filmsen
dc.typeJournal Articleen
dc.contributor.organizationA*STAR SIMTechen
dc.contributor.organizationA*STAR Institute of Microelectronicsen
dc.description.versionPublished versionen
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