Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91065
Title: Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films
Authors: Ding, Liang
Chen, Tupei
Wong, Jen It
Yang, Ming
Liu, Yang
Ng, Chi Yung
Liu, Yu Chan
Tung, Chih Hang
Trigg, Alastair David
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2006
Source: Ding, L., Chen, T. P., Wong, J. I., Yang, M., Liu, Y., Ng, C. Y., et al. (2006). Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO2 thin films. Applied Physics Letters, 89, 1-3.
Series/Report no.: Applied physics letters
Abstract: A densely stacked silicon nanocrystal layer embedded in a SiO2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si.
URI: https://hdl.handle.net/10356/91065
http://hdl.handle.net/10220/6401
ISSN: 0003-6951
DOI: 10.1063/1.2410227
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i25/p251910_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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