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|Title:||Charging effect of Al2O3 thin films containing Al nanocrystals||Authors:||Chen, X. B.
Cen, Zhan Hong
Wong, Jen It
Fung, Stevenson Hon Yuen
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2008||Source:||Liu, Y., Chen, T., Zhu, W., Yang, M., Cen, Z. H., Wong, J. I., et al. (2008). Charging effect of Al2O3 thin films containing Al nanocrystals. Applied Physics Letters, 93, 1-3.||Series/Report no.:||Applied physics letters||Abstract:||In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.||URI:||https://hdl.handle.net/10356/91153
|ISSN:||0003-6951||DOI:||10.1063/1.2994695||Rights:||Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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