Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91153
Title: Charging effect of Al2O3 thin films containing Al nanocrystals
Authors: Chen, X. B.
Liu, Yang
Chen, Tupei
Zhu, Wei
Yang, Ming
Cen, Zhan Hong
Wong, Jen It
Li, Yibin
Zhang, Sam
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2008
Source: Liu, Y., Chen, T., Zhu, W., Yang, M., Cen, Z. H., Wong, J. I., et al. (2008). Charging effect of Al2O3 thin films containing Al nanocrystals. Applied Physics Letters, 93, 1-3.
Series/Report no.: Applied physics letters
Abstract: In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.
URI: https://hdl.handle.net/10356/91153
http://hdl.handle.net/10220/6351
ISSN: 0003-6951
DOI: 10.1063/1.2994695
Rights: Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
Charging effect of Al2O3 thin films containing Al nanocrystals.pdf240.41 kBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.