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|Title:||Determination of diffusion length from within a confined region with the use of EBIC||Authors:||Ong, Vincent K. S.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2001||Source:||Ong, V. K. S., & Wu, D. (2001). Determination of diffusion length from within a confined region with the use of EBIC. IEEE Transactions on Electron Devices, 48(2), 332-337.||Series/Report no.:||IEEE transactions on electron devices||Abstract:||A new method of extracting minority carrier diffusion length from within a confined region of material is presented in this paper. This technique uses the finite difference method and can be used on samples where the diffusion lengths are longer than the width of the region. This cannot be achieved using the conventional method, which evaluates the negative reciprocal of the slope of the EBIC signals line scan plotted on a semi-logarithmic scale. A limitation of this method is that the beam entrance surface of the sample is assumed to have negligible surface recombination.||URI:||https://hdl.handle.net/10356/91351
|ISSN:||0018-9383||DOI:||10.1109/16.902735||Rights:||IEEE Transactions on Electron Devices © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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