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dc.contributor.authorXu, C. D.en
dc.contributor.authorMei, Tingen
dc.contributor.authorDong, Jian Rongen
dc.identifier.citationXu, C. D., Mei, T., & Dong J. R. (2007). Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence. Applied Physics Letters, 90, 1-3.en
dc.description.abstractDiffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-light-hole transitions and illustrate the time progression of intermixing clearly. The plasma-enhanced intermixing effect is investigated using this technique, showing the difference of intermixing development in the early and the late stages. It is seen that the calculated diffusion-length ratio may change with the annealing duration.en
dc.format.extent3 p.en
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © copyright 2007 American Institute of Physics. The journal's website is located at
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDetermination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescenceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Materials Research and Engineeringen
dc.description.versionPublished versionen
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