Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91414
Title: Sensitivity analysis of coupled interconnects for RFIC applications
Authors: Shi, Xiaomeng
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
Li, Erping
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2006
Source: Shi, X., Yeo, K. S., Ma, J. G., Do, M. A., & Li, E. (2006). Sensitivity analysis of coupled interconnects for RFIC applications. IEEE Transactions on Electromagnetic Compatibility, 48(4), 607-613.
Series/Report no.: IEEE transactions on electromagnetic compatibility
Abstract: This paper investigates the sensitivity of on-wafer coupled interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. Some important parameters characterizing the coupled interconnects have been examined. The influence of the process parameters on transmission, reflection, near-end, and far-end crosstalk capacities of the coupled interconnects are discussed.
URI: https://hdl.handle.net/10356/91414
http://hdl.handle.net/10220/4665
ISSN: 0018-9375
DOI: 10.1109/TEMC.2006.884417
Schools: School of Electrical and Electronic Engineering 
Rights: © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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