Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91587
Title: Thermal quenching mechanism of photoluminescence in 1.55 mu m GaInNAsSb/Ga(N)As quantum-well structures
Authors: Sun, Handong
Calvez, Stephane
Dawson, M. D.
Gupta, J. A.
Aers, G. C.
Sproule, G. I.
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2006
Source: Sun, H. D., Calvez, S., Dawson, M. D., Gupta, J. A., Aers, G. C., & Sproule, G. I. (2006). Thermal quenching mechanism of photoluminescence in 1.55 mm GaInNAsSb /Ga(N)As quantum-well structures. Applied Physics Letters, 89(10), 1-3.
Series/Report no.: Applied Physics Letters.
Abstract: The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 mu m at room temperature and whose design is such that the quantum wells have nominally identical valence band profiles but show different confinement depth in the conduction band. The photoluminescence quenching at high temperature demonstrates a thermal activation energy independent of the conduction band offset and can be most plausibly attributed to the unipolar thermalization of holes from the quantum wells to the barriers. This effect will intrinsically limit the flexibility of heterostructure design using GaInNAs(Sb), as it would for any other material system with small valence band offset. (c) 2006 American Institute of Physics.
URI: https://hdl.handle.net/10356/91587
http://hdl.handle.net/10220/6057
ISSN: 0003-6951
DOI: 10.1063/1.2345240
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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