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Title: Fabrication at wafer level of miniaturized gas sensors based on SnO2 nanorods deposited by PECVD and gas sensing characteristics
Authors: Forleo, Angiola
Francioso, Luca
Capone, Simonetta
Casino, Flavio
Siciliano, Pietro
Tan, Ooi Kiang
Huang, Hui
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2010
Source: Forleo, A., Francioso, L., Capone, S., Casino, F., Siciliano, P., Tan, O. K., & et al. (2010). Fabrication at wafer level of miniaturized gas sensors based on SnO2 nanorods deposited by PECVD and gas sensing characteristics. Sensors and Actuators B: Chemical, 154, 283-287.
Series/Report no.: Sensors and actuators B: chemical
Abstract: SnO2 nanorods were successfully deposited on 3″ Si/SiO2 wafers by inductively coupled plasma-enhanced chemical vapour deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shaped SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160–300 nm. The SnO2-nanorods based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.
DOI: 10.1016/j.snb.2010.01.010
Schools: School of Electrical and Electronic Engineering 
Rights: © 2010 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Sensors and Actuators B: Chemical, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
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