Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/91601| Title: | Comparative study of non-standard power diodes | Authors: | Tan, Cher Ming Raghavan, Nagarajan Sun, Lina Hsu, Chuck Wang, Chase |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2009 | Source: | Tan, C. M., Raghavan, N., Sun, L., Hsu, C., & Wang, C. (2009). Comparative study of non-standard power diodes. IEEE Conference on Industrial Electronics and Applications (4th:2009:Xian,China) | Conference: | IEEE Conference on Industrial Electronics and Applications (4th : 2009 : Xi'an, China) | Abstract: | Various non-standard power diode structures have been proposed which are superior in performance in comparison to the standard power diode. However, each of these structures help optimize certain electrical parameters with corresponding trade-offs for others. In this work, the electrical parameters of three non-standard diode structures viz. SPEED diode, BUFFER diode and CLC (Carrier Lifetime Control) diode are evaluated in comparison to those of the conventional P+NN+ standard diode. A Design of Experiment (DOE) combined with extensive MEDICI simulation is performed, followed by Response Surface Methodology (RSM) to empirically relate the electrical parameters with the diode structural and doping parameters. A global optimization algorithm, known as Simulated Annealing (SA) is used to optimize each individual electrical parameter. Sensitivity analysis for the mized electrical parameter is also performed to study the effects of inherent process variations on the device electrical parameters, indicating the manufacturability of the non-standard power diodes. | URI: | https://hdl.handle.net/10356/91601 http://hdl.handle.net/10220/6291 |
DOI: | 10.1109/ICIEA.2009.5138815 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Conference Papers |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Comparative Study of Non-standard power diodes.pdf | 441.52 kB | Adobe PDF |  View/Open |
Page view(s) 10
1,015
Updated on Mar 13, 2025
Download(s) 10
540
Updated on Mar 13, 2025
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.