Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91710
Title: Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
Authors: Sun, Handong
Clark, Antony H.
Calvez, Stephane
Dawson, M. D.
Shih, D. K.
Lin, H. H.
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2005
Source: Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3.
Series/Report no.: Applied Physics Letters.
Abstract: We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.
URI: https://hdl.handle.net/10356/91710
http://hdl.handle.net/10220/6059
ISSN: 0003-6951
DOI: 10.1063/1.2034119
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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