Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91710
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dc.contributor.authorSun, Handongen
dc.contributor.authorClark, Antony H.en
dc.contributor.authorCalvez, Stephaneen
dc.contributor.authorDawson, M. D.en
dc.contributor.authorShih, D. K.en
dc.contributor.authorLin, H. H.en
dc.date.accessioned2009-08-12T03:34:40Zen
dc.date.accessioned2019-12-06T18:10:35Z-
dc.date.available2009-08-12T03:34:40Zen
dc.date.available2019-12-06T18:10:35Z-
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationSun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/91710-
dc.description.abstractWe report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Letters.en
dc.rightsApplied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.en
dc.subjectDRNTU::Science::Physics::Optics and lighten
dc.titlePhotoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contentsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.openurlhttp://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici.en
dc.identifier.doi10.1063/1.2034119en
dc.description.versionPublished versionen
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