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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun, Handong | en |
dc.contributor.author | Clark, Antony H. | en |
dc.contributor.author | Calvez, Stephane | en |
dc.contributor.author | Dawson, M. D. | en |
dc.contributor.author | Shih, D. K. | en |
dc.contributor.author | Lin, H. H. | en |
dc.date.accessioned | 2009-08-12T03:34:40Z | en |
dc.date.accessioned | 2019-12-06T18:10:35Z | - |
dc.date.available | 2009-08-12T03:34:40Z | en |
dc.date.available | 2019-12-06T18:10:35Z | - |
dc.date.copyright | 2005 | en |
dc.date.issued | 2005 | en |
dc.identifier.citation | Sun, H. D., Clark, A. H., Calvez, S., Dawson M. D., Shih, D. K., Lin, H. H. (2005). Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87(8), 1-3. | en |
dc.identifier.issn | 0003-6951 | en |
dc.identifier.uri | https://hdl.handle.net/10356/91710 | - |
dc.description.abstract | We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content. | en |
dc.format.extent | 3 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Applied Physics Letters. | en |
dc.rights | Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/. | en |
dc.subject | DRNTU::Science::Physics::Optics and light | en |
dc.title | Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Physical and Mathematical Sciences | en |
dc.identifier.openurl | http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:ELSEVIER_SCOPUS&id=doi:&genre=&isbn=&issn=&date=2005&volume=87&issue=8&spage=1&epage=3&aulast=Sun&aufirst=%20H%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Photoluminescence%20characterization%20of%20midinfrared%20in%20Nx%20As1%2Dx%20%2F%20In0%2E53%20Ga0%2E47%20AsInP%20multiquantum%20wells%20with%20various%20N%20contents&sici. | en |
dc.identifier.doi | 10.1063/1.2034119 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | SPMS Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
APL87-081908-2005-MIR-InNAs.pdf | Published version | 79.1 kB | Adobe PDF | View/Open |
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