Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91711
Title: Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model
Authors: Qiu, Y. N.
Rorison, J. M.
Sun, Handong
Calvez, Stephane
Dawson, M. D.
Bryce, A. C.
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2005
Source: Qiu, Y. N., Rorison, J. M., Sun, H. D., Calvez, S, Dawson, M. D., & Bryce A. C. (2005). Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. Applied Physics Letters, 87(23), 1-3.
Series/Report no.: Applied physics letters
Abstract: We investigate the influence of quantum-well intermixing (QWI) on the electronic band structure of GaInNAs/GaAs multiquantum wells. The band structures and optical transitions have been calculated based on the band-anticrossing (BAC) model and Fick's interdiffusion law for both intermixed and nonintermixed samples, respectively. The calculated results are consistent with the true optical transitions observed by photoluminescence excitation spectroscopy and secondary ion mass spectroscopy. Our investigation indicates that BAC model is valid for interdiffused quantum wells and verifies that the QWI process in GaInNAs/GaAs multiquantum wells is induced mainly by the interdiffusion of In-Ga between the quantum wells and barriers.
URI: https://hdl.handle.net/10356/91711
http://hdl.handle.net/10220/6058
ISSN: 0003-6951
DOI: 10.1063/1.2138350
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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