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dc.contributor.authorYuan, Guoliangen
dc.contributor.authorWang, Junlingen
dc.identifier.citationYuan, G. L., & Wang, J. (2009). Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. Applied Physics Letters, 95.en
dc.description.abstractFerroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current.en
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2009 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materials::Magnetic materialsen
dc.titleEvidences for the depletion region induced by the polarization of ferroelectric semiconductorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.description.versionPublished versionen
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