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Title: Influence of oxygen pressure on the ferroelectric properties of epitaxial BiFeO3 thin films by pulsed laser deposition
Authors: Yao, Kui
Chen, Lang
Wang, Junling
You, Lu
Chua, Ngeah Theng
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2009
Source: You, L., Chua, N. T., Yao, K., Chen, L., & Wan, J. (2009). Influence of Oxygen Pressure on the Ferroelectric Properties of Epitaxial BiFeO3 Thin Films by Pulsed Laser Deposition. Physical Review B, 80.
Series/Report no.: Physical review B
Abstract: The growth window of multiferroic BiFeO3 thin films is very small. Both temperature and oxygen pressure will affect the film quality and phase purity significantly. We demonstrate here that even within the window where phase pure BiFeO3 thin films can be obtained, different oxygen partial pressures still lead to substantial variation in Bi/Fe ratio in the film, which closely link with the corresponding ferroelectric properties. Piezoelectric force microscopy also reveals significant difference in the domain structures of these films. A defectdipole complex model is proposed to explain the difference in the electrical properties and domain structures for films grown under different oxygen pressures.
DOI: 10.1103/PhysRevB.80.024105
Rights: © 2009 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following DOI: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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