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https://hdl.handle.net/10356/91816
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DC Field | Value | Language |
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dc.contributor.author | Sun, Handong | en |
dc.contributor.author | Macaluso, Roberto | en |
dc.contributor.author | Calvez, Stephane | en |
dc.contributor.author | Dawson, M. D. | en |
dc.contributor.author | Robert, F. | en |
dc.contributor.author | Bryce, A. C. | en |
dc.contributor.author | Marsh, J. H. | en |
dc.contributor.author | Gilet, P. | en |
dc.contributor.author | Grenouillet, L. | en |
dc.contributor.author | Million, A. | en |
dc.contributor.author | Nam, K. B. | en |
dc.contributor.author | Lin, J. Y. | en |
dc.contributor.author | Jiang, H. X. | en |
dc.date.accessioned | 2009-08-12T03:48:08Z | en |
dc.date.accessioned | 2019-12-06T18:12:24Z | - |
dc.date.available | 2009-08-12T03:48:08Z | en |
dc.date.available | 2019-12-06T18:12:24Z | - |
dc.date.copyright | 2003 | en |
dc.date.issued | 2003 | en |
dc.identifier.citation | Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., et al. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585. | en |
dc.identifier.issn | 0021-8979 | en |
dc.identifier.uri | https://hdl.handle.net/10356/91816 | - |
dc.description.abstract | We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. | en |
dc.format.extent | 5 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Journal of Applied Physics. | en |
dc.rights | Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/. | en |
dc.subject | DRNTU::Science::Physics::Optics and light | en |
dc.title | Quantum well intermixing in GaInNAs/GaAs structures | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Physical and Mathematical Sciences | en |
dc.identifier.openurl | http://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=12&spage=7581&epage=7585&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Quantum%20well%20intermixing%20in%20GaInNAs%2FGaAs%20structures%2E&sici. | en |
dc.identifier.doi | 10.1063/1.1627950 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | SPMS Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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JAP94-7581-QWI-03.pdf | Published version | 83.48 kB | Adobe PDF | View/Open |
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