Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91818
Title: Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy
Authors: Sun, Handong
Clark, Antony H.
Calvez, Stephane
Dawson, M. D.
Kim, K. S.
Kim, T.
Park, Y. J.
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2005
Source: Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., et al. (2005). Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 87(2).
Series/Report no.: Applied physics letters
Abstract: We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics.
URI: https://hdl.handle.net/10356/91818
http://hdl.handle.net/10220/6045
ISSN: 0003-6951
DOI: 10.1063/1.1993758.
Schools: School of Physical and Mathematical Sciences 
Rights: Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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