Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91818
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dc.contributor.authorSun, Handongen
dc.contributor.authorClark, Antony H.en
dc.contributor.authorCalvez, Stephaneen
dc.contributor.authorDawson, M. D.en
dc.contributor.authorKim, K. S.en
dc.contributor.authorKim, T.en
dc.contributor.authorPark, Y. J.en
dc.date.accessioned2009-08-12T01:23:19Zen
dc.date.accessioned2019-12-06T18:12:27Z-
dc.date.available2009-08-12T01:23:19Zen
dc.date.available2019-12-06T18:12:27Z-
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationSun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., et al. (2005). Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 87(2).en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/91818-
dc.description.abstractWe report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics.en
dc.format.extent3 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.en
dc.subjectDRNTU::Science::Physics::Optics and lighten
dc.titleEffect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxyen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.openurlhttp://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00036951&date=2005&volume=87&issue=2&spage=021903&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Applied%20Physics%20Letters&atitle=Effect%20of%20multilayer%20barriers%20on%20the%20optical%20properties%20of%20GaInNAs%20single%20quantum%2Dwell%20structures%20grown%20by%20metalorganic%20vapor%20phase%20epitaxy%2E&sici.en
dc.identifier.doi10.1063/1.1993758.en
dc.description.versionPublished versionen
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