Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91823
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dc.contributor.authorMangelinck, D.en
dc.contributor.authorChan, L.en
dc.contributor.authorLee, Pooi Seeen
dc.contributor.authorPey, Kin Leongen
dc.contributor.authorDing, Junen
dc.contributor.authorChi, Dong Zhien
dc.date.accessioned2012-07-26T01:48:56Zen
dc.date.accessioned2019-12-06T18:12:33Z-
dc.date.available2012-07-26T01:48:56Zen
dc.date.available2019-12-06T18:12:33Z-
dc.date.copyright2001en
dc.date.issued2001en
dc.identifier.citationLee, P. S., Pey, K. L., Mangelick, D., Ding, J., Chi, D. Z., & Chan, L. (2001). New Salicidation Technology with Ni(Pt) Alloy for MOSFETs. IEEE Electron Device Letters, 22(12), 568-570.en
dc.identifier.urihttps://hdl.handle.net/10356/91823-
dc.description.abstractA novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) windowby delaying the nucleation of NiSi2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE electron device lettersen
dc.rights© 2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.974579.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleNew salicidation technology with Ni(Pt) alloy for MOSFETsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1109/55.974579en
dc.description.versionAccepted versionen
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