Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91823
Title: New salicidation technology with Ni(Pt) alloy for MOSFETs
Authors: Mangelinck, D.
Chan, L.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Chi, Dong Zhi
Keywords: DRNTU::Engineering::Materials
Issue Date: 2001
Source: Lee, P. S., Pey, K. L., Mangelick, D., Ding, J., Chi, D. Z., & Chan, L. (2001). New Salicidation Technology with Ni(Pt) Alloy for MOSFETs. IEEE Electron Device Letters, 22(12), 568-570.
Series/Report no.: IEEE electron device letters
Abstract: A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the low thermal budget (<700 °C) of the conventional Ni salicidation by forming Ni(Pt)Si. The addition of Pt has enhanced the thermal stability of NiSi. Improved sheet resistance of the salicided narrow poly-Si and active lines was achieved up to 750 °C and 700 °C for as-deposited Ni(Pt) thickness of 30 nm and 15 nm, respectively. This successfully extends the rapid thermal processing (RTP) windowby delaying the nucleation of NiSi2 and agglomeration. Implementation of Ni(Pt) alloyed silicidation was demonstrated on PMOSFETs with high drive current and low junction leakage.
URI: https://hdl.handle.net/10356/91823
http://hdl.handle.net/10220/8340
DOI: 10.1109/55.974579
Rights: © 2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.974579.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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