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https://hdl.handle.net/10356/91847
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhang, X. H. | en |
dc.contributor.author | Nie, Dong | en |
dc.contributor.author | Mei, Ting | en |
dc.contributor.author | Djie, Hery Susanto | en |
dc.contributor.author | Ooi, Boon Siew | en |
dc.date.accessioned | 2010-09-06T03:22:25Z | en |
dc.date.accessioned | 2019-12-06T18:12:59Z | - |
dc.date.available | 2010-09-06T03:22:25Z | en |
dc.date.available | 2019-12-06T18:12:59Z | - |
dc.date.copyright | 2006 | en |
dc.date.issued | 2006 | en |
dc.identifier.citation | Zhang, X. H., Nie, D., Mei, T., Djie, H. S., & Ooi, B. S. (2006). Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. Applied Physics Letters, 88, 1-3. | en |
dc.identifier.issn | 0003-6951 | en |
dc.identifier.uri | https://hdl.handle.net/10356/91847 | - |
dc.description.abstract | The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions. | en |
dc.format.extent | 3 p. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Applied physics letters | en |
dc.rights | Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no | en |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials | en |
dc.title | Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.organization | A*STAR Institute of Materials Research and Engineering | en |
dc.identifier.doi | 10.1063/1.2215602 | en |
dc.description.version | Published version | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles |
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File | Description | Size | Format | |
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Improving crystal quality of InGaAs GaAs quantum dots by inductively coupled Ar plasma.pdf | 355.09 kB | Adobe PDF | View/Open |
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