Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91848
Title: Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions
Authors: Ye, J. D.
Ding, Liang
Liu, Yang
Wong, Jen It
Fung, Stevenson Hon Yuen
Cen, Zhan Hong
Chen, Tupei
Liu, Zhen
Yang, Ming
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2009
Source: Ding, L., Ye, J. D., Liu, Y., Wong, J. I., Fung, S. H. Y., Cen, Z. H., et al. (2009). Optical transmission and photoluminescence of silicon nitride thin films implanted with Si ions. Electrochemical and Solid State Letters, 12(2), H38-H40.
Series/Report no.: Electrochemical and solid state letters
Abstract: The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ~680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of sigma and sigma*, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100 degree celcius, and it is attributed to the formation of stable Si nanoclusters.
URI: https://hdl.handle.net/10356/91848
http://hdl.handle.net/10220/6422
ISSN: 1099-0062
DOI: 10.1149/1.3039952
Rights: Electrochemical and Solid State Letters © copyright 2009 Electrochemical Society. This journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF6000012000002000H38000001&idtype=cvips&gifs=yes&ref=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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