Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91849
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dc.contributor.authorZhao, P.en
dc.contributor.authorYang, X. H.en
dc.contributor.authorNg, Chi Yungen
dc.contributor.authorChen, Tupeien
dc.contributor.authorDing, Liangen
dc.contributor.authorYang, Mingen
dc.contributor.authorWong, Jen Iten
dc.contributor.authorTse, Man Siuen
dc.contributor.authorTrigg, Alastair Daviden
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.date.accessioned2010-09-06T01:27:07Zen
dc.date.accessioned2019-12-06T18:13:02Z-
dc.date.available2010-09-06T01:27:07Zen
dc.date.available2019-12-06T18:13:02Z-
dc.date.copyright2006en
dc.date.issued2006en
dc.identifier.citationZhao, P., Yang, X. H., Ng, C. Y., Chen, T., Ding, L., & Yang, M., et al. (2006). Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance. IEEE transactions on electron devices, 53(4), 730-736.en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/91849-
dc.description.abstractIn this paper, the authors have studied the influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate. The nc-Si is synthesized by Si-ion implantation. The effective dielectric constant of the gate oxide in the nc-Si distributed region is calculated based on a sublayer model of the nc-Si distribution and the Maxwell-Garnett effective medium approximation. After the depth distribution of the effective dielectric constant is obtained, the MOS capacitance is determined. Two different nc-Si distributions, i.e., partial and full nc-Si distributions in the gate oxide, have been considered. The MOS capacitance obtained from the modeling has been compared to the capacitance measurement for a number of samples with various gate-oxide thicknesses, implantation energies and dosages, and an excellent agreement has been achieved for all the samples. A detailed picture of the influence of implantation energy and implantation dosage on the MOS capacitance has been obtained.en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rightsIEEE Transactions on Electron Devices © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleInfluence of Si nanocrystal distributed in the gate oxide on the MOS capacitanceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Microelectronicsen
dc.identifier.doi10.1109/TED.2006.870872en
dc.description.versionPublished versionen
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