Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92041
Title: Improved NiSi salicide process using presilicide N2+ implant for MOSFETs
Authors: Wee, A. T. S.
Chan, L.
Mangelinck, D.
Lee, Pooi See
Pey, Kin Leong
Ding, Jun
Keywords: DRNTU::Engineering::Materials
Issue Date: 2000
Source: Lee, P. S., Pey, K. L., Mangelinck, D., Ding, J., Wee, T. S., & Chan, L. (2000). Improved NiSi Salicide Process using Presilicide N2+ Implant for MOSFETs. IEEE Electron Device Letters, 21(12), 566-568.
Series/Report no.: IEEE electron device letters
Abstract: An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N+2 implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N+2 implant.
URI: https://hdl.handle.net/10356/92041
http://hdl.handle.net/10220/8341
DOI: 10.1109/55.887467
Rights: © 2000 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/55.887467.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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