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dc.contributor.authorLi, S.en
dc.contributor.authorZhao, P.en
dc.contributor.authorLiu, Yangen
dc.contributor.authorChen, Tupeien
dc.contributor.authorNg, Chi Yungen
dc.contributor.authorTse, Man Siuen
dc.contributor.authorFung, Stevenson Hon Yuenen
dc.contributor.authorLiu, Yu Chanen
dc.identifier.citationLi, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137.en
dc.description.abstractWe report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.en
dc.format.extent4 p.en
dc.relation.ispartofseriesElectrochemical and solid state lettersen
dc.rightsElectrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleCharging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxideen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR SIMTechen
dc.description.versionPublished versionen
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