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Title: A wideband low power low-noise amplifier in CMOS technology
Authors: Meaamar, Ali
Boon, Chirn Chye
Yeo, Kiat Seng
Do, Manh Anh
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 2010
Source: Meaamar, A., Boon, C. C., Yeo, K. S., & Do, M. A. (2008). A Wideband Low Power Low-Noise Amplifier in CMOS Technology. IEEE Transactions on Circuits and Systems—I. 57(4), 773-782.
Series/Report no.: IEEE transactions on circuits and systems—I
Abstract: A T-coil network can be implemented as a high order filter for bandwidth extension. This technique is incorporated into the design of the input matching and output peaking networks of a low-noise amplifier. The intrinsic capacitances within the transistors are exploited as a part of the wideband structure to extend the bandwidth. Using the proposed topology, a wideband low-noise amplifier with a bandwidth of 3–8 GHz, a maximum gain of 16.4 dB and noise figure of 2.9 dB (min) is achieved. The total power consumption of the wideband low-noise amplifier from the 1.8 V power supply is 3.9 mW. The prototype is fabricated in 0.18 µm CMOS technology.
ISSN: 1549-8328
DOI: 10.1109/TCSI.2009.2028592
Rights: © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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