Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92224
Title: Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film
Authors: Ng, Chi Yung
Chen, Tupei
Ding, Liang
Liu, Yang
Fung, Stevenson Hon Yuen
Tse, Man Siu
Dong, Zhili
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2006
Source: Ng, C. Y., Chen, T. P., Ding, L., Liu, Y., Fung, S. H. Y., Tse, M. S., et al. (2006). Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film. Applied Physics Letters, 88, 1-3.
Series/Report no.: Applied physics letters
Abstract: The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼ 4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices.
URI: https://hdl.handle.net/10356/92224
http://hdl.handle.net/10220/6406
ISSN: 0003-6951
DOI: 10.1063/1.2172009
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i6/p063103_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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