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Title: Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Authors: Xu, S. J.
Li, G. Q.
Wang, Y. J.
Zhao, Yang
Chen, Guan Hua
Zhao, D. G.
Zhu, J. J.
Yang, H.
Yu, D. P.
Wang, J. N.
Keywords: DRNTU::Science::Physics::Optics and light
DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2006
Source: Xu, S. J., Li, G. Q., Wang, Y. J., Zhao, Y., Chen, G. H., Zhao, D. G., et al. (2006). Quantum dissipation and broadening mechanisms due to electron-phonon interactions in Si-doped self-formed InGaN quantum dots, Applied Physics Letters 88, 1-3.
Series/Report no.: Applied physics letters
Abstract: Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ~0.2 and 200 cm−1, respectively, for the InGaN QDs.
DOI: 10.1063/1.2179113
Rights: © 2006 AIP. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [Doi:]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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