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|Title:||1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process||Authors:||Yoon, Soon Fatt
Zhao, L. J.
Xu, D. W.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2011||Source:||Xu, D. W., Yoon, S. F., Ding, Y., Tong, C., Fan, W., & Zhao, L. J. (2011). 1.3-μm In(Ga)As Quantum-dot VCSELs Fabricated by Dielectric-free Approach with Surface-relief Process. IEEE photonics technology letters, 23(2), 91-93.||Journal:||IEEE Photonics Technology Letters||Series/Report no.:||IEEE photonics technology letters||Abstract:||We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed.||URI:||https://hdl.handle.net/10356/92287
|ISSN:||1041-1135||DOI:||10.1109/LPT.2010.2091269||Rights:||© 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/LPT.2010.2091269].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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