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Title: 1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process
Authors: Yoon, Soon Fatt
Tong, Cunzhu
Fan, Weijun
Ding, Y.
Zhao, L. J.
Xu, D. W.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2011
Source: Xu, D. W., Yoon, S. F., Ding, Y., Tong, C., Fan, W., & Zhao, L. J. (2011). 1.3-μm In(Ga)As Quantum-dot VCSELs Fabricated by Dielectric-free Approach with Surface-relief Process. IEEE photonics technology letters, 23(2), 91-93.
Journal: IEEE Photonics Technology Letters
Series/Report no.: IEEE photonics technology letters
Abstract: We present the 1.3-μ m In(Ga)As quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) fabricated by the dielectric-free (DF) approach with the surface-relief (SR) process. Compared with the conventional dielectric-dependent (DD) method, the lower differential resistance and improved output power have been achieved by the DF approach. With the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mW under pulsed operation with oxide aperture diameter ~15 μm. The surface-relief technique is also applied, for the first time, in 1.3- μm QD VCSELs, and it effectively enhances the emission of the fundamental mode. The characteristic of small signal modulation response is also analyzed.
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2091269
Rights: © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI:].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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