Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition

Abstract

This communication reports on the novel work of creating a transistor channel based on functionalized

single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of

drop-cast though convenient was unable to produce replicable transistor device due to its inherent

inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization

was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good

transistor device.