Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92386
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dc.contributor.authorFam, Derrick Wen Huien
dc.contributor.authorTok, Alfred Iing Yoongen
dc.date.accessioned2011-08-12T04:25:50Zen
dc.date.accessioned2019-12-06T18:22:25Z-
dc.date.available2011-08-12T04:25:50Zen
dc.date.available2019-12-06T18:22:25Z-
dc.date.copyright2009en
dc.date.issued2009en
dc.identifier.citationFam, D. W. H., & Tok, A. I. Y. (2009). Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition. Journal of Colloid and Interface Science, 338, 266-269.en
dc.identifier.urihttps://hdl.handle.net/10356/92386-
dc.description.abstractThis communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of colloid and interface scienceen
dc.rights© 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Colloid and Interface Science, Elsevier.  It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: http://dx.doi.org/10.1016/j.jcis.2009.06.003.en
dc.subjectDRNTU::Engineering::Materials::Nanostructured materialsen
dc.titleMono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization depositionen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1016/j.jcis.2009.06.003en
dc.description.versionAccepted versionen
dc.identifier.rims157868en
item.grantfulltextopen-
item.fulltextWith Fulltext-
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