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Title: N-type behavior of ferroelectric-gate carbon nanotube network transistor
Authors: Cheah, Jun Wei
Shi, Yumeng
Ong, Hock Guan
Lee, Chun Wei
Li, Lain-Jong
Wang, Junling
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2008
Source: Cheah, J. W., Shi, Y., Ong, H. G., Lee, C. W., Li, L. J., & Wang, J. (2008). N-type behavior of ferroelectric-gate carbon nanotube network transistor. Applied Physics Letters, 93.
Series/Report no.: Applied physics letters
Abstract: Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of >10^2 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n-type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.
DOI: 10.1063/1.2975158
Rights: © 2008 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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