Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92634
Title: Charge collection from within a collecting junction well
Authors: Kurniawan, Oka.
Ong, Vincent K. S.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2008
Source: Kurniawan, O., & Ong, K. S. (2008). Charge Collection From Within a Collecting Junction Well. IEEE Transactions on Electron Devices. 55(5), 1220-1228.
Series/Report no.: IEEE transactions on electron devices
Abstract: This paper provides the analytical equation for the charge collection from a collecting region with a finite dimension. Electron-beam-induced current has widely been used for semiconductor characterization. The availability of analytical expressions would further enhance the study and development of various measurement techniques. Nevertheless, most devices are fabricated with junctions that have finite dimensions, which are usually either L shaped or U shaped. For these cases, the analytical expressions are lacking. This paper provides the derivation of the electric current profile when an electron beam scans from within the collecting region for these two cases. The computation was verified with a semiconductor device simulation program on a computer and was found to be in good agreement. This paper then gives a discussion on the effects of certain parameters such as the junction depth and junction width, the diffusion length, and the depth of the generation volume.
URI: https://hdl.handle.net/10356/92634
http://hdl.handle.net/10220/6270
ISSN: 0018-9383
DOI: 10.1109/TED.2008.918660
Rights: © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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