Please use this identifier to cite or link to this item:
Title: Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems
Authors: Fan, Wei Jun
Bose, Sumanta
Zhang, Dao Hua
Keywords: Optical lattices
Electronic bandstructure
Issue Date: 2016
Source: Fan, W. J., Bose, S., & Zhang, D. H. (2016). Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems. Journal of Applied Physics, 120(9), 093111-.
Series/Report no.: Journal of Applied Physics
Abstract: Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 μm optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of Nitrogen (N) helps to attain lattice matching with GaAs, while providing a route for flexible bandgap tuning. Here we present a study of the electronic bandstructure and optical gain of the lattice matched GaNxBiyAs1-x-y/GaAs quaternary alloy quantum well (QW) based on the 16-band k.p model. We have taken into consideration the interactions between the N and Bi impurity states with the host material based on the band anticrossing (BAC) and valence band anticrossing (VBAC) model. The optical gain calculation is based on the density matrix theory. We have considered different lattice matched GaNBiAs QW cases and studied their energy dispersion curves, optical gain spectrum, maximum optical gain and differential gain; and compared their performances based on these factors. The thickness and composition of these QWs were varied in order to keep the emission peak fixed at 1.55 μm. The well thickness has an effect on the spectral width of the gain curves. On the other hand, a variation in the injection carrier density has different effects on the maximum gain and differential gain of QWs of varying thicknesses. Among the cases studied, we found that the 6.3 nm thick GaN3Bi5.17As91.83 lattice matched QW was most suited for 1.55 μm (0.8 eV) GaAs-based photonic applications.
ISSN: 0021-8979
DOI: 10.1063/1.4962214
Schools: School of Electrical and Electronic Engineering 
Research Centres: Centre for OptoElectronics and Biophotonics 
Rights: © 2016 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Citations 20

Updated on Apr 20, 2024

Web of ScienceTM
Citations 20

Updated on Oct 25, 2023

Page view(s)

Updated on Apr 23, 2024

Download(s) 50

Updated on Apr 23, 2024

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.