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Title: Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
Authors: Song, Zhigang
Fan, Weijun
Tan, Chuan Seng
Wang, Qijie
Nam, Donguk
Zhang, Dao Hua
Sun, Greg
Keywords: GeSn
Band Structure
Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2019
Source: Song, Z., Fan, W., Tan, C. S., Wang, Q., Nam, D., Zhang, D. H., & Sun, G. (2019). Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model. New Journal of Physics, 21(7), 073037-. doi:10.1088/1367-2630/ab306f
Project: NRF–CRP19–2017–01
Journal: New Journal of Physics
Series/Report no.: New Journal of Physics
Abstract: A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1−xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and α-Sn obtained with empirical tight binding and ab initio methods. Input parameters for the 30-band k · p model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge1−xSnx alloy with the composition range 0 < x < 0.3. The 30-band k · p model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge1−xSnx alloy with a large parameter space to explore.
ISSN: 1367-2630
DOI: 10.1088/1367-2630/ab306f
Rights: © 2019 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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