Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/93563
Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Shoushunen
dc.contributor.authorFarid, Boussaiden
dc.contributor.authorAmine, Bermaken
dc.date.accessioned2010-08-20T05:54:25Zen
dc.date.accessioned2019-12-06T18:41:32Z-
dc.date.available2010-08-20T05:54:25Zen
dc.date.available2019-12-06T18:41:32Z-
dc.date.copyright2008en
dc.date.issued2008en
dc.identifier.citationChen, S. S., Farid, B., & Amine, B. (2008). Robust intermediate read-out for deep submicron technology CMOS image sensors. IEEE Sensors Journal, 8(3), 286-294.en
dc.identifier.issn1530-437Xen
dc.identifier.urihttps://hdl.handle.net/10356/93563-
dc.description.abstractIn this paper, a CMOS image sensor featuring a novel spiking pixel design and a robust digital intermediate read-out is proposed for deep submicron CMOS technologies. The proposed read-out scheme exhibits a relative insensitivity to the ongoing aggressive scaling of the supply voltage. It is based on a novel compact spiking pixel circuit, which combines digitizing and memory functions. Illumination is encoded into a Gray code using a very simple yet robust Gray 8-bit counter memory. Circuit simulations and experiments demonstrate the successful operation of a 64 64 image sensor, implemented in a 0.35 m CMOS technology. A scalability analysis is presented. It suggests that deep sub-0.18 m will enable the full potential of the proposed Gray encoding spiking pixel. Potential applications include multiresolution imaging and motion detection.en
dc.format.extent9 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE sensors journalen
dc.rights© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic systemsen
dc.titleRobust intermediate read-out for deep submicron technology CMOS image sensorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/JSEN.2007.912783en
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
Robust Intermediate Read-Out for Deep Submicron Technology CMOS Image Sensors.pdf3.59 MBAdobe PDFThumbnail
View/Open

SCOPUSTM   
Citations 20

22
checked on Sep 3, 2020

WEB OF SCIENCETM
Citations 50

12
checked on Sep 25, 2020

Page view(s) 50

1,235
checked on Sep 25, 2020

Download(s) 50

588
checked on Sep 25, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.