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dc.contributor.authorSun, Handongen
dc.contributor.authorHetterich, M.en
dc.contributor.authorDawson, M. D.en
dc.contributor.authorBernklau, D.en
dc.contributor.authorRiechert, H.en
dc.contributor.authorEgorov, A. Yuen
dc.identifier.citationSun, H. D., Hetterich, M., Dawson, M. D., Egorov, A. Y., Bernklau, D., & Riechert, H. (2002). Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. Journal of Applied Physics., 92(3), 1380-1385.en
dc.description.abstractThe optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.en
dc.format.extent7 p.en
dc.relation.ispartofseriesJournal of Applied Physics.en
dc.rightsJournal of Applied Physics © 2002 American Institute of Physics. The journal's website is located at
dc.subjectDRNTU::Science::Physics::Optics and lighten
dc.titleOptical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen contenten
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.description.versionPublished versionen
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