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|Title:||Intense vortex pinning enhanced by semicrystalline defect traps in self-aligned nanostructured MgB2||Authors:||Li, S.
White, Timothy John
Tan, T. T.
Sun, C. Q.
Zho, S. H.
Dou, S. X.
|Keywords:||DRNTU::Engineering::Materials::Nanostructured materials||Issue Date:||2003||Source:||Li, S., White, T., Laursen, K., Tan, T. T., Sun, C. Q., Dong, Z. L., et al. (2003). Intense vortex pinning enhanced by semicrystalline defect traps in self-aligned nanostructured MgB2. Applied Physics Letters, 83 (2), 314-316.||Series/Report no.:||Applied physics letters||Abstract:||In this work, we report the discovery of a vortex pinning source: semicrystalline defect wells in self-aligned nanostructured MgB2. It is demonstrated that these aperiodic regions trap numerous crystal defects migrating along nanodomain boundaries during self-alignment and act as intense vortex pinning centers that significantly enhance the high-field performance of MgB2. This suggests that the density of trapped defects in the wells is much greater than that found in other vortex pinning sources.||URI:||https://hdl.handle.net/10356/93772
|DOI:||10.1063/1.1591070||Rights:||© 2003 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1591070]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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