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|Title:||Ultraviolet emission from a ZnO rod homojunction light-emitting diode||Authors:||Li, X. C.
Zhao, Jun Liang
Tan, Swee Tiam
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2009||Source:||Sun, X., Ling, B., Zhao, J. L., Tan, S. T., Yang, Y., Shen, Y., et al. (2009). Ultraviolet emission from a ZnO rod homojunction light-emitting diode. Applied physics letters, 95.||Series/Report no.:||Applied physics letters||Abstract:||Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p-type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the lattice compression of annealed single crystalline P-doped ZnO rod compared to the as-grown ZnO rod, suggesting atomically incorporation of P into the ZnO wurtzite structure. p-type doping was confirmed by low temperature photoluminescence spectra and single rod current-voltage characterization.||URI:||https://hdl.handle.net/10356/93779
|DOI:||10.1063/1.3243453||Rights:||© 2009 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.3243453]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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