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dc.contributor.authorShi, Yumengen
dc.contributor.authorDong, Xiaochenen
dc.contributor.authorChen, Pengen
dc.contributor.authorWang, Junlingen
dc.contributor.authorLi, Lain-Jongen
dc.identifier.citationShi, Y., Dong, X., Chen, P., Wang, J., & Li, L. J. (2009). Effective doping of single-layer graphene from underlying SiO2 substrates. Physical Review B, 79.en
dc.description.abstractWhen a single-layer graphene (SLG) is on SiO2 substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO2 substrates.en
dc.format.extent4 p.en
dc.relation.ispartofseriesPhysival review Ben
dc.rights© 2009 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following DOI: One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materials::Nanostructured materialsen
dc.titleEffective doping of single-layer graphene from underlying SiO2 substratesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.description.versionPublished versionen
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