Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/93965
Title: Multilayer stacked low-temperature-reduced graphene oxide films : preparation, characterization, and application in polymer memory devices
Authors: Liu, Juqing
Lin, Zongqiong
Liu, Tianjun
Yin, Zongyou
Zhou, Xiaozhu
Chen, Shufen
Xie, Linghai
Boey, Freddy Yin Chiang
Zhang, Hua
Huang, Wei
Keywords: DRNTU::Engineering::Materials
Issue Date: 2010
Source: Liu, J., Lin, Z., Liu, T., Yin, Z., Zhou, X., Chen, S., et al. (2010). Multilayer stacked low-temperature-reduced graphene oxide films : preparation, characterization, and application in polymer memory devices. Small, 6(14), 1536-1542.
Series/Report no.: Small
Abstract: Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 °C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance (≈160–500 Ω sq−1) and higher conductivity (26 S cm−1) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large “effective reduction depth” in the GO films (1.46 µm) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write-once-read-many-times effect and a high ON/OFF current ratio of 106.
URI: https://hdl.handle.net/10356/93965
http://hdl.handle.net/10220/8609
ISSN: 1613-6829
DOI: 10.1002/smll.201000328
Rights: © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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