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dc.contributor.authorLiu, Juqingen
dc.contributor.authorLin, Zongqiongen
dc.contributor.authorLiu, Tianjunen
dc.contributor.authorYin, Zongyouen
dc.contributor.authorZhou, Xiaozhuen
dc.contributor.authorChen, Shufenen
dc.contributor.authorXie, Linghaien
dc.contributor.authorBoey, Freddy Yin Chiangen
dc.contributor.authorZhang, Huaen
dc.contributor.authorHuang, Weien
dc.identifier.citationLiu, J., Lin, Z., Liu, T., Yin, Z., Zhou, X., Chen, S., et al. (2010). Multilayer stacked low-temperature-reduced graphene oxide films : preparation, characterization, and application in polymer memory devices. Small, 6(14), 1536-1542.en
dc.description.abstractHighly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 °C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance (≈160–500 Ω sq−1) and higher conductivity (26 S cm−1) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large “effective reduction depth” in the GO films (1.46 µm) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write-once-read-many-times effect and a high ON/OFF current ratio of 106.en
dc.rights© 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.titleMultilayer stacked low-temperature-reduced graphene oxide films : preparation, characterization, and application in polymer memory devicesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
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