Atomic stacking configurations in atomic layer deposited TiN films

Abstract

Study on the atomic stacking configurations and grain boundary structures of ultrathin nanocrystalline TiN

films deposited by the atomic layer deposition technique reveals that the dangling bonds and surface

reconstruction may be the intrinsic factors that result in the crystal growth with different configurations. The

surface topography of the amorphous SiO2 layer is an extrinsic factor to affect the atomic stacking configurations

in ultrathin nanocrystalline TiN films. The analysis indicates that the coherent boundary should be the favored

boundary in the connection of the tilt grains. These atomic stacking and grain boundary configurations may

be the main factors to produce the pinhole-free, high-density, and homogeneous ultrathin nanocrystalline

TiN film prepared by the atomic layer deposition method. This study may provide new insight into the

fundamental mechanism and properties of ultrathin TiN films.