Formation and characterization of magnetron sputtered Ta–Si–N–O thin films

Abstract

Tantalum silicon nitride films have good potential to be used as hard coatings and diffusion barriers. In this

work, films with different composition were deposited using a magnetron sputter under varying nitrogen

flow rates. The composition, microstructure, thermal stability and electrical resistivity have been

investigated. In the as-deposited state, all films consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix

compounds. The composition of films is affected by N2 flow rate. The resistivity of the as-deposited films

increases with N concentrations. At elevated temperatures, all films show good thermal stability to at least

800 °C, while film with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy

compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal

stability of Ta–Si–N–O films.