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Title: Formation and characterization of magnetron sputtered Ta–Si–N–O thin films
Authors: Xu, S.
Chen, Z.
Yan, H.
Li, L.
Ho, F. Y.
Liang, M. H.
Pan, J. S.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2009
Source: Yan, H., Li, L., Ho, F. Y., Liang, M. H., Pan, J. S., Xu, S., & Chen, Z. (2009). Formation and characterization of magnetron sputtered Ta-Si-N-O thin films. Thin Solid Films, 517(17), 5207-5211.
Series/Report no.: Thin solid films
Abstract: Tantalum silicon nitride films have good potential to be used as hard coatings and diffusion barriers. In this work, films with different composition were deposited using a magnetron sputter under varying nitrogen flow rates. The composition, microstructure, thermal stability and electrical resistivity have been investigated. In the as-deposited state, all films consist of amorphous TaSixOy, TaxOy, TaxNy and TaSix compounds. The composition of films is affected by N2 flow rate. The resistivity of the as-deposited films increases with N concentrations. At elevated temperatures, all films show good thermal stability to at least 800 °C, while film with high Si concentration is largely amorphous at 900 °C because of highly stable TaSixOy compounds. This study suggests that the TaSixOy compounds could be the key factor in enhancing thermal stability of Ta–Si–N–O films.
DOI: 10.1016/j.tsf.2009.03.057
Rights: © 2009 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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